DE150-201N09A 데이터 시트보기 (PDF) - IXYS CORPORATION

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DE150-201N09A

RF Power MOSFET

IXYS CORPORATION 

DE150-201N09A

RF Power MOSFET

N-Channel Enhancement Mode

Low Qg and Rg

High dv/dt

Nanosecond Switching

Symbol Test Conditions

Maximum Ratings

VDSS

=

ID25

=

RDS(on) =

200 V

15 A

0.2 Ω

VDSS

VDGR

VGS

VGSM

ID25

IDM

IAR

EAR

dv/dt

PDC

PDHS

PDAMB

RthJC

RthJHS

Symbol

VDSS

VGS(th)

IGSS

IDSS

RDS(on)

TJ = 25°C to 150°C

TJ = 25°C to 150°C; RGS = 1 MΩ

Continuous

Transient

Tc = 25°C

Tc = 25°C, pulse width limited by TJM

Tc = 25°C

Tc = 25°C

IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,

Tj ≤ 150°C, RG = 0.2Ω

IS = 0

Tc = 25°C

Derate 4.4W/°C above 25°C

Tc = 25°C

200 V

200 V

±20 V

±30 V

15.0 A

90 A

9.0 A

7.5 mJ

5 V/ns

>200 V/ns

200 W

80 W

3.5 W

0.74 C/W

1.15 C/W

Test Conditions

Characteristic Values

TJ = 25°C unless otherwise specified

min. typ. max.

VGS = 0 V, ID = 3 ma

200

V

VDS = VGS, ID = 4 ma

2

3

4V

VGS = ±20 VDC, VDS = 0

±100 nA

VDS = 0.8 VDSS TJ = 25°C

VGS = 0

TJ = 125°C

25 µA

250 µA

VGS = 15 V, ID = 0.5ID25

Pulse test, t ≤ 300µS, duty cycle d ≤ 2%

0.2 Ω

PDC

= 200 W

GATE

DRAIN

SG1 SG2

SD1 SD2

Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power

cycling capability

• IXYS advanced low Qg process

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other

hazardous materials

gfs

TJ

TJM

Tstg

TL

Weight

VDS = 15 V, ID = 0.5ID25, pulse test

1.6mm (0.063 in) from case for 10 s

3.0

8.0

S

-55

+175 °C

1750

°C

-55

+175 °C

300

°C

2

g

Advantages

• Optimized for RF and high speed

switching at frequencies to >100MHz

• Easy to mount—no insulators needed

• High power density

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