IPS09N03LA(2004) 데이터 시트보기 (PDF) - Infineon Technologies
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IPS09N03LA Datasheet PDF : 11 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
16
IPD09N03LA IPF09N03LA
IPS09N03LA IPU09N03LA
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.5
14
12
10
98 %
8
typ
6
2
200 µA
1.5
20 µA
1
4
0.5
2
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. Capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
25 °C
103
1000
102
100
Ciss
Coss
Crss
100
10
175 °C
175 °C, 98%
25 °C, 98%
101
10
0
Rev. 1.7
5
10
15
20
25
30
V DS [V]
1
0.0
page 6
0.5
1.0
1.5
V SD [V]
2.0
2004-05-19
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