IPU12N03L 데이터 시트보기 (PDF) - Infineon Technologies
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IPU12N03L Datasheet PDF : 8 Pages
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IPD12N03L
IPU12N03L
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 30 A, VGS = 10 V
26 IPD12N03L
mΩ
22
20
18
16
14
12
98%
10
typ
8
6
4
2
0
-60 -20 20 60 100 140 °C 200
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
2.5
V
0,4mA
1.5
50µA
1
0.5
0
-60 -20
20
60 100 °C
180
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 IPD12N03L
A
pF
Ciss
10 2
10 3
Coss
Crss
10 2
0
5
10
15
20
V
30
VDS
Page 6
10 1
10 0
0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
2003-01-17
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