IRFR4105PBF 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.
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IRFR4105PBF Datasheet PDF : 10 Pages
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IRFR/U4105PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.045
VGS = 10V, ID = 16A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
6.5 ––– ––– S VDS = 25V, ID = 16A
––– ––– 25
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 34
ID = 16A
––– ––– 6.8 nC VDS = 44V
––– ––– 14
VGS = 10V, See Fig. 6 and 13
––– 7.0 –––
VDD = 28V
––– 49 ––– ns ID = 16A
––– 31 –––
RG = 18Ω
––– 40 –––
RD = 1.8Ω, See Fig. 10
Between lead,
D
––– 4.5 ––– nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 700 –––
––– 240 –––
––– 100 –––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 27
A showing the
integral reverse
G
––– ––– 100
p-n junction diode.
S
––– ––– 1.6 V TJ = 25°C, IS = 16A, VGS = 0V
––– 57 86 ns TJ = 25°C, IF = 16A
––– 130 200 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 410µH
RG = 25Ω, IAS = 16A. (See Figure 12)
ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Uses IRFZ34N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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