2N3906G(2007) 데이터 시트보기 (PDF) - ON Semiconductor
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2N3906G Datasheet PDF : 7 Pages
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2N3906
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = 30 Vdc, VEB = 3.0 Vdc)
DC Current Gain
Collector −Emitter Saturation Voltage
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
Fall Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
Min
40
40
5.0
−
−
60
80
100
60
30
−
−
0.65
−
250
−
−
2.0
0.1
100
3.0
−
−
−
−
−
Max
Unit
−
Vdc
−
Vdc
−
Vdc
50
nAdc
50
nAdc
−
−
−
300
−
−
0.25
Vdc
0.4
0.85
Vdc
0.95
−
MHz
4.5
pF
10
pF
12
kW
10
X 10− 4
400
−
60
mmhos
4.0
dB
35
ns
35
ns
225
ns
75
ns
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