MCL4448 데이터 시트보기 (PDF) - Rectron Semiconductor

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MCL4448

Micro-MELF SIGNAL DIODE

Rectron Semiconductor 

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

MCL4448

1N4448 Micro-MELF SIGNAL DIODE

Absolute Maximum Ratings (Ta = 25°C)

ITEMS

Symbol Ratings Unit

Peak Reverse Voltage VRM

Reverse Recovery

trr

Time

Power Dissipation

P

100

V

4

ns

500 mW

Forward Current

Junction Temp.

Storage Temp.

IFM

500 * mA

Tj (-65 to 175) °C

Tstg (-65 to 175) °C

Mechanical Data

Items

Materials

Package

Micro MELF

Case

Hermetically sealed glass

Lead/Finish

Double stud/Solder Plating

Chip

Glass Passivated

0.079(2.0)

0.071(1.8)

Micro-MELF

0.049(1.25)

0.047(1.20)

0.008(0.2)

Units in mm

Ratings

Non-Repetive Peak Reverse Voltage

Minimum Breakdown Voltage @IR= 100mA

Peak Forward Surge Current @ t = 1.0s

Forward Continuous Current

Maximum Forward Voltage IF= 100mA

Maximum Reverse Current

VR= 20V

VR= 75V

VR= 20V, Tj= 150 °C

Maximum Junction Capacitance

VR= 0, f= 1 MHz

Maximum Reverse Recovery Time

IF= 10mA, VR= 6V, IR= -1mA, RL= 100Ω

Maximum Thermal Resistance

* Note: Device terminals at ambient temperature

Symbol

VRM

BV

IFSM

IFM

VF

IR

Cj

trr

RθJA

Ratings

100

75

1*

500 *

1

25

5

30

4

4

300

Unit

V

V

A

mA

V

nA

µA

µA

pF

ns

K/W

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