MJ4030 데이터 시트보기 (PDF) - Inchange Semiconductor
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MJ4030 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
MJ4030
DESCRIPTION
·With TO-3 package
·Respectively complement to type MJ4035
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in complementary general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current
-16
A
IBB
Base Current
-0.5
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
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