NJVMJD117T4G(2013) 데이터 시트보기 (PDF) - ON Semiconductor

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NJVMJD117T4G
(Rev.:2013)

Complementary Darlington Power Transistors

ON Semiconductor 

MJD112 (NPN),

MJD117 (PNP)

Complementary Darlington

Power Transistors

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant*

http://onsemi.com

SILICON

POWER TRANSISTORS

2 AMPERES

100 VOLTS, 20 WATTS

DPAK

CASE 369C

DPAK−3

CASE 369D

MARKING DIAGRAMS

AYWW

J11xG

YWW

J11xG

DPAK

DPAK−3

A = Assembly Location

Y = Year

WW = Work Week

x = 2 or 7

G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 8 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013

1

November, 2013 − Rev. 13

Publication Order Number:

MJD112/D

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