MJE4343G 데이터 시트보기 (PDF) - ON Semiconductor
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MJE4343G Datasheet PDF : 8 Pages
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MJE4343 (NPN),
MJE4353 (PNP)
High-Voltage - High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
Features
• High Collector−Emitter Sustaining Voltage −
NPN PNP
VCEO(sus) = 160 Vdc − MJE4343 MJE4353
• High DC Current Gain − @ IC = 8.0 Adc hFE = 35 (Typ)
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC
= 8.0 Adc
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Max
Collector−Emitter Voltage
VCEO
160
Collector−Base Voltage
VCB
160
Emitter−Base Voltage
VEB
7.0
Collector Current −
Continuous
IC
16
Peak (Note 1)
20
Base Current − Continuous
IB
5.0
Total Power Dissipation @ TC
PD
125
= 25°C
Operating and Storage Junc-
tion
Temperature Range
TJ, Tstg
– 65 to + 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction
RqJC
1.0
to Case
1. Pulse Test: Pulse Width v 5.0 ms, Duty Cycle w 10%.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
°C
Unit
°C/W
http://onsemi.com
16 AMPS
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
4
1
2
3
SOT−93
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 5
Publication Order Number:
MJE4343/D
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