MPS6714 MPS6715
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
Base – Emitter On Voltage
(IC = 1000 mAdc, VCE = 1.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
hFE
60
50
VCE(sat)
—
VBE(on)
—
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
v v 1. Pulse Test: Pulse Width 30 ms; Duty Cycle 2.0%.
Ccb
—
hfe
2.5
300
1.0
200
0.8
Max
Unit
—
—
250
0.5
Vdc
1.2
Vdc
30
pF
25
—
TJ = 25°C
100
70
VCE = 1.0 V
50
TJ = 25°C
30
10
20
50
100 200
500 1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
0.6
0.4
IC =
0.2 10 mA
IC =
50 mA
IC =
1000 mA
IC =
IC =
100 mA
IC = 500 mA
250 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
IB, BASE CURRENT (mA)
10 20
50 100
Figure 2. Collector Saturation Region
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1.0 2.0
5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
–0.8
–1.2
–1.6
qVB FOR VBE
–2.0
–2.4
–2.8
1.0 2.0
5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficient
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data