MTP50P03HDLG 데이터 시트보기 (PDF) - ON Semiconductor
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MTP50P03HDLG Datasheet PDF : 8 Pages
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MTP50P03HDL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 3)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 3.0) (Note 3)
Static Drain−to−Source On−Resistance
(VGS = 5.0 Vdc, ID = 25 Adc)
(Cpk ≥ 3.0) (Note 3)
Drain−to−Source On−Voltage (VGS = 10 Vdc)
(ID = 50 Adc)
(ID = 25 Adc, TJ = 125°C)
Forward Transconductance
(VDS = 5.0 Vdc, ID = 25 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 50 Adc,
VGS = 5.0 Vdc, RG = 2.3 W)
Fall Time
Gate Charge
(See Figure 8)
(VDS = 24 Vdc, ID = 50 Adc,
VGS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS =50 Adc, VGS = 0 Vdc)
(IS = 50 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(See Figure 15)
(IS = 50 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Symbol Min Typ Max Unit
V(BR)DSS
30
−
−
26
Vdc
−
− mV/°C
IDSS
mAdc
−
−
1.0
−
−
10
IGSS
−
−
100 nAdc
VGS(th)
RDS(on)
VDS(on)
gFS
Vdc
1.0 1.5 2.0
−
4.0
− mV/°C
W
− 0.020 0.025
Vdc
− 0.83 1.5
−
−
1.3
15
20
mhos
−
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
− 3500 4900 pF
− 1550 2170
−
550 770
−
22
30
ns
−
340 466
−
90 117
−
218 300
−
74 100
nC
− 13.6 −
− 44.8 −
−
35
−
Vdc
− 2.39 3.0
− 1.84 −
−
106
−
ns
−
58
−
−
48
−
− 0.246 −
mC
nH
−
3.5
−
−
4.5
−
nH
−
7.5
−
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