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NIF9N05CLT1

Protected Power MOSFET

ON Semiconductor 

NIF9N05CL, NIF9N05ACL

Protected Power MOSFET

2.6 A, 52 V, N−Channel, Logic Level,

Clamped MOSFET w/ ESD Protection

in a SOT−223 Package

Benefits

• High Energy Capability for Inductive Loads

• Low Switching Noise Generation

Features

• Diode Clamp Between Gate and Source

• ESD Protection − HBM 5000 V

• Active Over−Voltage Gate to Drain Clamp

• Scalable to Lower or Higher RDS(on)

• Internal Series Gate Resistance

• Pb−Free Packages are Available

Applications

• Automotive and Industrial Markets:

Solenoid Drivers, Lamp Drivers, Small Motor Drivers

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−to−Source Voltage Internally Clamped

Gate−to−Source Voltage − Continuous

Drain Current

− Continuous @ TA = 25°C

− Single Pulse (tp = 10 ms) (Note 1)

Total Power Dissipation @ TA = 25°C (Note 1)

Operating and Storage Temperature Range

Single Pulse Drain−to−Source

Avalanche Energy (VDD = 50 V, ID(pk) = 1.17

A, VGS = 10 V, L = 160 mH, RG = 25 W)

Thermal Resistance,

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

VDSS

VGS

ID

IDM

PD

TJ, Tstg

EAS

RqJA

RqJA

TL

52−59

±15

2.6

10

1.69

−55 to 150

110

74

169

260

V

V

A

W

°C

mJ

°C/W

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2).

2. When surface mounted to a FR4 board using minimum recommended pad

size, (Cu area 0.412 in2).

© Semiconductor Components Industries, LLC, 2011

1

November, 2011 − Rev. 6

http://onsemi.com

VDSS

(Clamped)

52 V

RDS(ON) TYP

107 mW

ID MAX

2.6 A

Gate

(Pin 1)

Overvoltage

Protection

RG

ESD Protection

Drain

(Pins 2, 4)

MPWR

Source

(Pin 3)

SOT−223

CASE 318E

STYLE 3

MARKING DIAGRAM

1

GATE

2

DRAIN

3

SOURCE

4

DRAIN

(Top View)

A

= Assembly Location

Y

= Year

W

= Work Week

xxxxx = F9N05 or 9N05A

G

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

NIF9N05CL/D

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