NIF9N05CLT1 데이터 시트보기 (PDF) - ON Semiconductor
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NIF9N05CLT1 Datasheet PDF : 6 Pages
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NIF9N05CL, NIF9N05ACL
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
VGS = 4.5 V, VDD = 40 V,
ID = 2.6 A, RD = 15.4 W
VGS = 4.5 V, VDD = 40 V,
ID = 1.0 A, RD = 40 W
VGS = 10 V, VDD = 15 V,
ID = 2.6 A, RD = 5.8 W
VGS = 4.5 V, VDS = 40 V,
ID = 2.6 A (Note 3)
Gate Charge
VGS = 4.5 V, VDS = 15 V,
ID = 1.5 A (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
QT
Q1
Q2
Forward On−Voltage
IS = 2.6 A, VGS = 0 V (Note 3)
VSD
IS = 2.6 A, VGS = 0 V, TJ = 125°C
Reverse Recovery Time
trr
IS = 1.5 A, VGS = 0 V,
dIs/dt = 100 A/ms (Note 3)
ta
tb
Reverse Recovery Stored Charge
QRR
ESD CHARACTERISTICS
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
Machine Model (MM)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
Typ
Max
275
1418
780
1120
242
1165
906
1273
107
290
1540
1000
4.5
0.9
2.6
3.9
1.0
1.7
465
2400
1320
1900
7.0
0.81
1.5
0.66
730
200
530
6.3
5000
500
Unit
ns
ns
ns
nC
nC
V
ns
mC
V
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