NIF9N05CLT1 데이터 시트보기 (PDF) - ON Semiconductor

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NIF9N05CLT1

Protected Power MOSFET

ON Semiconductor 

NIF9N05CL, NIF9N05ACL

TYPICAL PERFORMANCE CURVES

6

VGS = 10, 5 & 4 V

3.8 V TJ = 25°C

3.6 V

4

3.4 V

3.2 V

2

3V

2.8 V

2.6 V

2.4 V

0

0 1 2 3 4 5 6 7 8 9 10

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

6

VDS ≥ 10 V

5

4

3

2

TJ = −55°C

TJ = 25°C

1

0

TJ = 100°C

1

2

3

4

5

6

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.4

0.24

ID = 2 A

TJ = 25°C

TJ = 25°C

0.3

0.2

VGS = 4 V

0.2

0.16

0.1

0.12

VGS = 10 V

0

2

4

6

8

10

12

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

0.08

1

2

3

4

5

6

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1.9 ID = 2.6 A

VGS = 12 V

1.7

1000000

1.5

100000

1.3

TJ = 150°C

1.1

10000

TJ = 100°C

0.9

0.7

0.5

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

1000

30

35

40

45

50

55

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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