PHB66NQ03LT 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHB66NQ03LT Datasheet PDF : 13 Pages
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NXP Semiconductors
PHB66NQ03LT
N-channel TrenchMOS logic level FET
80
ID
(A)
Tj = 25 °C
60
10 V 6 V 5 V
40
20
0
0
0.5
1
03ag20
4.5 V
4V
3.5 V
VGS = 3 V
1.5
2
VDS (V)
80
ID
(A)
VDS > ID x RDSon
60
03ag22
40
20
175 °C
Tj = 25 °C
0
0
1
2
3
4
5
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
2.5
VGS(th)
(V)
2
max
03aa33
10-1
ID
(A)
10-2
03aa36
1.5
typ
1
min
10-3
min
typ
max
10-4
0.5
10-5
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
VGS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHB66NQ03LT_7
Product data sheet
Rev. 07 — 30 January 2009
© NXP B.V. 2009. All rights reserved.
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