SMBT3906S 데이터 시트보기 (PDF) - Siemens AG
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SMBT3906S Datasheet PDF : 8 Pages
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PNP Silicon Switching Transistor Array
• High DC current gain: 0.1mA to 100mA
• Low collector-emitter saturation voltage
• Two ( galvanic) internal isolated Transistors
with high matching in one package
• Complementary type: SMBT 3904S (NPN)
SMBT 3906S
4
5
6
3
2
1
VPS05604
Type
Marking Ordering Code Pin Configuration
Package
SMBT 3906S s2A
Q62702-A1202 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
VCEO
Value
Unit
40
V
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
VCBO
VEBO
IC
Ptot
Tj
Tstg
RthJA
RthJS
40
6
200
mA
250
mW
150
°C
- 65...+150
≤275
K/W
≤140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
SSeemmicicoonndduucctotor rGGrorouupp
11
Sep-109798-1-1919-081
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