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SS110 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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제조사
SS110
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  
SS110 Datasheet PDF : 2 Pages
1 2
Features
Schottky Barrier Rectifier
Guard Ring Protection
Low Forward Voltage
Reverse Energy Tested
High Current Capability
Extremely Low Thermal Resistance
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 35 °C/W Junction To Lead
Catalog
Number
SS12
SS13
SS14
SS15
SS16
SS18
SS110
Device
Marking
SS12
SS13
SS14
SS15
SS16
SS18
SS110
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
50V
60V
80V
100V
Maximum
RMS
Voltage
14V
21V
28V
35V
42V
56V
70V
Maximum
DC
Blocking
Voltage
20V
30V
40V
50V
60V
80V
100V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
Peak Forward Surge
IFSM
30A
Current
Maximum
Instantaneous
Forward Voltage
SS12
VF
SS13
.45V
.55V
SS14
.60V
SS15-16
.70V
SS18-110
.85V
Maximum DC
Reverse Current At
Rated DC Blocking
IR
0.5mA
20mA
Voltage
Typical Junction
Capacitance
SS12
CJ
SS13-SS110
230pF
50pF
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
TJ = 100°C
8.3ms, half sine
IFM = 1.0A;
TJ = 25°C*
TA = 25°C
TA = 100°C
Measured at
1.0MHz, VR=4.0V
1 
JinYu
semiconductor
www.htsemi.com
SS12 THRU SS110
1 Amp Schottky
Rectifier
20 to 100 Volts
DO-214AC
A
Cathode Band
B
G
C
F
H
E
D
DIMENSIONS
INCHES
DIM
MIN
MAX
A
0.157
0.177
B
0.100
0.110
C
0.078
0.096
D
0.194
0.222
E
0.055
0.071
F
0.008
G
0.006
0.012
H
0.030
0.060
MM
MIN
3.99
2.54
1.98
4.93
1.40
0.152
0.76
MAX
4.50
2.80
2.42
5.56
1.80
0.203
0.305
1.52
NOTE
Date:2011/05

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