SS8550 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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SS8550

Silicon Epitaxial Planar PNP Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

SS8550

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0

-40

V

Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=B 0

-25

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100μA,IC=0

-5

V

Collector cut-off current

Collector cut-off current

Emitter cut-off current

ICBO

VCB=-40V,IE=0

ICEO

VCE=-20V,IB=B 0

IEBO

VEB=-5V,IC=0

-0.1 μA

-0.1 μA

-0.1 μA

DC current gain

VCE=-1V,IC=-100mA

120

400

hFE

VCE=-1V,IC=-800mA

40

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

VCE(sat)

VBE(sat)

fT

IC=-800mA, IB=B -80mA

IC=-800mA, IB=B -80mA

VCE=-10V, IC= -50mA

f=30MHz

100

-0.5 V

-1.2 V

MHz

Output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

20 pF

Base-emitter voltage

VBEF

IE=-1.5A

-1.6 V

CLASSIFICATION OF hFE(1)

Rank

L

Range

120-200

H

200-350

J

300-400

Document number: BL/SSSTC087

Rev.A

www.galaxycn.com

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