T2316405A 데이터 시트보기 (PDF) - Taiwan Memory Technology

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T2316405A

4M x 4 DYNAMIC RAM EDO PAGE MODE

Taiwan Memory Technology 

tm TE

CH

RA S VVIIHL

CA S VVIIHL

A DDR VVIIHL

WE VVIIHL

I/O VVOOHL

OE VVIIHL

READ CYCLE

tR C

tRAS

T2316405A

Preliminary T2316407A

tRP

tC R P

tR C D

t C SH

t R SH

tCAS

tRRH

tA S R

tR A D

tRAH

RO W

tA R

tA S C

t R AL

tCAH

CO LUMN

tR C S

t RC H

ROW

OP EN

tA A

t R AC

t C AC

tCLZ

tO A C

NOTE 1

tOFF 1

V A L ID D A T A

tO FF2

O PE N

EARLY WRITE CYCLE

RAS

V

V

IH

IL

C AS

V

V

IH

IL

A DDR

V

V

IH

IL

tC R P

tA S R

tR A D

tR A H

ROW

WE

V

V

IH

IL

I /O

V

V

IOH

IOL

OE

V

V

IH

IL

tR C

tR A S

t RC D

tC S H

tR S H

tCAS

tA R

tA S C

tRAL

tCAH

CO LUMN

tC W L

tR W L

t WC S

tW C R

tW C H

tW P

tDH R

tDS

tD H

V A L ID D A T A

tR P

ROW

DON'T CARE

UNDEFINED

Note: tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.

2Taiwan Memory Technology, Inc. reserves the right P. 8

to change products or specifications without notice.

Publication Date: APR. 2001

Revision:0.B

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