T2316405A 데이터 시트보기 (PDF) - Taiwan Memory Technology

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T2316405A

4M x 4 DYNAMIC RAM EDO PAGE MODE

Taiwan Memory Technology 

tm TE

CH

T2316405A

Preliminary T2316407A

RA S VVIIHL

CA S VVIIHL

ADDR VVIIHL

WE VVIIHL

I/O

VIOH

V IOL

OE

VIH

V IL

READ WRITE CYCLE

(LATE WRITE and READ-MODIFY-WRITE CYCLES)

tR WC

tR A S

tR P

tC R P

tRC D

tC S H

tR SH

tC A S

tA SR

tA R

tR AD

tR A H

RO W

tA SC

tR AL

tC A H

C OLUM N

tR C S

tR WD

tC WD

tA WD

tC WL

tR WL

tWP

RO W

OP EN

tC L Z

tA A

tR A C

tC AC

tD S t DH

tOA C

V A LID DO U T V A L ID D IN

tO F F 2

tOE H

OPE N

EDO-PAGE-MODE READ CYCLE

RAS VVIIHL

CA S VVIIHL

ADDR VVIIHL

WE VVIIHL

I /O

VOH

VOL

OE VVIIHL

tC R P

tC S H

tR C D

tC A S

tA S R

t RA D

t RA H

ROW

tA R

tA S C

t CA H

C O L U MN

tR C S

tC L Z

OPE N

tA A

tR AC

tC AC

tO A C

tOES

t RA S C

tP C

tC P

tC A S

tC P

tR SH

tC AS

tR P

tC P N

tA S C

t CA H

C OLUMN

tA S C

t CA H

tR A L

C OLUMN

tR C H

ROW

tR RH

tC O H

V A L ID

DAT A

t AA

tAC P

t CA C

tC L Z

tA A

tA C P

t CA C

V A LID

DAT A tO E H C

tOFF2

tO A C

tOES

tO E P

N O TE1

tO F F 1

V A L ID

DA TA

tO F F 2

OP EN

DON'T CARE

UNDEF INED

Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.

2. tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of

CAS to rising edge of CAS . Both measurements must meet the tPC specification.

2Taiwan Memory Technology, Inc. reserves the right P. 9

to change products or specifications without notice.

Publication Date: APR. 2001

Revision:0.B

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