T810-400B 데이터 시트보기 (PDF) - STMicroelectronics
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T810-400B Datasheet PDF : 5 Pages
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T810-xxxB
®
T835-xxxB
FEATURES
ITRMS = 8 A
SENSITIVE GATE : IGT ≤ 10mA and 35mA
HIGH COMMUTATION TECHNOLOGY
HIGH ITSM CAPABILITY
HIGH PERFORMANCE TRIACS
A2
DESCRIPTION
The T810-xxxB and T835-xxxB series are using
high performance TOPGLASS PNPN technology.
These devices are intented for AC control applica-
tions, using surface mount technology where high
commutating and surge performances are re-
quired (like power tools, Solid State Relay).
A2 G
A1
DPAK
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
T
Parameter
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2t value for fusing
Critical rate of rise of on-state current
IG = 50mA diG/dt = 0.1A/µs
Tc =110 °C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10 s
Value
8
85
80
32
20
100
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
T810-/T835-
Unit
400B
600B
400
600
V
May 1998 Ed : 1A
1/5
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