TIP120 데이터 시트보기 (PDF) - Semihow
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TIP120 Datasheet PDF : 5 Pages
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TIP120/121/122
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- Complementary to TIP125/126/127
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP120
: TIP121
: TIP122
VCBO
60
V
80
V
100
V
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
VCEO
60
V
80
V
100
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
5
V
5
A
8
A
120
㎃
2
W
65
W
150
℃
-65~150
℃
PNP Epitaxial
Silicon Darlington
Transistor
Equivalent Circuit
TO-220
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
VCEO(SUS)
IC=100mA, IB=0
Collector Cut-off Current
ICEO
: TIP120
: TIP121
: TIP122
Collector Cut-off Current
ICBO
: TIP120
: TIP121
: TIP122
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter ON Voltage
Output Capacitance
* Pulse Test: PW≤300us, Duty Cycle≤2%
VBE(on)
Cob
VCE=30V,IB=0
VCE=40V,IB=0
VCE=50V,IB=0
VCE=60V,IE=0
VCE=80V,IE=0
VCE=100V,IE=0
VEB=5V,IC=0
VCE=3V,IC=0.5A
VCE=3V,IC=3A
IC=3A,IB=12mA
IC=5A,IB=20mA
VCE=3V,IC=3A
VCB=10V,IE=0, f=0.1MHz
Min
60
80
100
1000
1000
Max
Unit
V
V
V
0.5
㎃
0.5
㎃
0.5
㎃
0.2
㎃
0.2
㎃
0.2
㎃
2
㎃
2
V
4
V
2.5
V
200
㎊
◎ SEMIHOW REV.A0,Oct 2007
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