ZXMN4A06G 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZXMN4A06G

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXMN4A06G

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance (1)

Forward Transconductance (3)

DYNAMIC (3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

Reverse Recovery Time (3)

Reverse Recovery Charge (3)

SYMBOL MIN. TYP. MAX. UNIT

CONDITIONS.

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

trr

Qrr

40

V ID=250␮A, VGS=0V

1

␮A VDS=40V, VGS=0V

100

nA VGS=±20V, VDS=0V

1.0

V

I =250␮A,

D

VDS=

VGS

0.050

0.075

⍀ VGS=10V, ID=4.5A

⍀ VGS=4.5V, ID=3.2A

8.7

S VDS=15V,ID=2.5A

770

pF

92

pF

VDS=40 V, VGS=0V,

f=1MHz

61

pF

2.55

4.45

28.61

7.35

18.2

2.1

4.5

ns

ns VDD =30V, ID=2.5A

ns

RG=6.0⍀, VGS=10V

(refer to test circuit)

ns

nC VDS=30V,VGS=10V,

nC ID=2.5A

nC (refer to test circuit)

0.8 0.95

19.86

16.36

V TJ=25°C, IS=2.5A,

VGS=0V

ns TJ=25°C, IF=2.5A,

nC di/dt= 100A/µs

NOTES

(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 1 - MAY 2002

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