SLD302V 데이터 시트보기 (PDF) - Sony Semiconductor

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SLD302V

200mW High Power Laser Diode

Sony Semiconductor 

SLD302V

Electrical and Optical Characteristics

Item

Symbol

Threshold current

Ith

Operating current

Iop

Operating voltage

Vop

Wavelength∗1

λp

Monitor current

Imon

Radiation angle

(F. W. H. M.∗)

Perpendicular θ⊥

Parallel

θ//

Position

Positional accuracy

Angle

∆X, ∆Y

∆φ⊥

Differential efficiency

ηD

∗ F. W. H. M. : Full Width at Half Maximum

Conditions

PO = 180mW

PO = 180mW

PO = 180mW

PO = 180mW

VR = 10V

PO = 180mW

PO = 180mW

PO = 180mW

(Tc: Case temperature, Tc = 25°C)

Min.

Typ.

Max.

Unit

150

200

mA

350

500

mA

1.9

3.0

V

770

840

nm

0.3

mA

28

40

degree

12

17

degree

±50

µm

±3

degree

0.65

0.9

mW/mA

∗1 Wavelength Selection Classification

Type

Wavelength (nm)

SLD302V-1

785 ± 15

SLD302V-2

810 ± 10

SLD302V-3

830 ± 10

Type

SLD302V-21

SLD302V-24

SLD302V-25

Wavelength (nm)

798 ± 3

807 ± 3

810 ± 3

Handling Precautions

Eye protection against laser beams

The optical output of laser diodes ranges from

several mW to 1W. However the optical power

density of the laser beam at the diode chip

reaches 1mW/cm2. Unlike gas lasers, since

laser diode beams are divergent, uncollimated

laser diode beams are fairly safe at a laser

diode. For observing laser beams, ALWAYS use

safety goggles that block infrared rays. Usage of

IR scopes, IR cameras and fluorescent plates is

also recommended for monitoring laser beams

safely.

Laser diode

Lens

Optical

material

ATC

APC

Optical boad

Optical power output control device

temperature control device

–2–

Safety goggles for

protection from

laser beam

IR fluorescent plate

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