2SC5161TL 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SC5161TL

High voltage switching transistor (400V, 2A)

ROHM Semiconductor 

Transistors

High voltage switching transistor

(400V, 2A)

2SC5161

2SC5161

!Features

1) Low VCE(sat).

VCE(sat)=0.15V (Typ.)

(IC/IB=1A/0.2A)

2) High breakdown voltage.

VCEO=400V

3) Fast switching.

tf ≤1.0µs

(IC=0.8A)

!Structure

Three-layer, diffused planar type

NPN silicon transistor

!External dimensions (Units : mm)

6.5±0.2

5.1+−00..21

C0.5

2.3

+0.2

−0.1

0.5±0.1

0.75

0.9

0.65±0.1

2.3±0.2 2.3±0.2

0.5±0.1

1.0±0.2

(1) (2) (3)

ROHM : CPT3

EIAJ : SC-63

(1) Base

(2) Collector

(3) Emitter

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

IC

Collector current

ICP

Collector power dissipation

PC

Junction temperature

Storage temperature

∗ Single pulse Pw=10ms

Tj

Tstg

Limits

400

400

7

2

4

1

10

150

−55~+150

Unit

V

V

V

A(DC)

A(Pulse) ∗

W

W(Tc=25°C)

°C

°C

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