2SC5161TL 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SC5161TL Datasheet PDF : 3 Pages
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Transistors
2SC5161
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Turn-on time
tON
Storage time
tstg
Fall time
tf
∗1 Measured using pulse current
Min.
400
400
7
−
−
−
−
25
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
10
30
−
−
−
Max.
−
−
−
10
10
1
1.5
50
−
−
1
2.5
1
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
µs
µs
µs
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=400V
VEB=7V
IC/IB=1A/0.2A
IC/IB=1A/0.2A
VCE=5V, IC=0.1A
VCE=10V,IE=−0.1A,f=5MHz
∗1
VCB=10V, IE=0A, f=1MHz
IC=0.8A, RL=250Ω
IB1=−IB2=0.08A
VCC 200V
Refer to measurement circuit diagram
!Packaging specifications and hFE
Package name
Code
Taping
TL
Type
2SC5161
Basic ordering unit
hFE (pieces)
B
2500
hFE values are classified as follows :
Item
B
hFE
25~50
!Electrical characteristic curves
10
VCE=5V
5
2
1
0.5
Ta=100°C
0.2
25°C
0.1
−25°C
0.05
0.02
0.01
0.005
0.002
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
2.0
180mA
1.6
120mA
Tc=25°C
80mA
1.2
60mA
40mA
0.8
0.4
20mA
IB=10mA
0
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
1000
500
Ta=25°C
200
100
50
20
10
VCE=10V
5
5V
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs.
collector current ( Ι )
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