MMBT5401LT1G 데이터 시트보기 (PDF) - ON Semiconductor

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MMBT5401LT1G

High Voltage Transistor

ON Semiconductor 

MMBT5401LT1

PACKAGE DIMENSIONS

SOT−23−3 (TO−236)

CASE 318−08

ISSUE AK

A

L

3

BS

1

2

V

G

C

D

H

K

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

INCHES

DIM MIN

MAX

A 0.1102 0.1197

B 0.0472 0.0551

C 0.0350 0.0440

D 0.0150 0.0200

G 0.0701 0.0807

H 0.0005 0.0040

J 0.0034 0.0070

K 0.0140 0.0285

L 0.0350 0.0401

S 0.0830 0.1039

V 0.0177 0.0236

STYLE 6:

PIN 1.

2.

3.

BASE

EMITTER

COLLECTOR

MILLIMETERS

MIN MAX

2.80

3.04

1.20

1.40

0.89

1.11

0.37

0.50

1.78

2.04

0.013 0.100

0.085 0.177

0.35

0.69

0.89

1.02

2.10

2.64

0.45

0.60

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

0.9

0.035

2.0

0.079

0.8

0.031

ǒ Ǔ SCALE 10:1

mm

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

5

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