BAV103(1997) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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BAV103 Datasheet PDF : 3 Pages
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BAV103
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
Expansion Gap
High Voltage,
General Purpose Diode
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
GREEN
ORANGE
Sym
Parameter
Value
Tstg
TJ
PD
ROJA
Wiv
IO
IF
if
iF(surge)
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at TA = 25OC
Linear Derating Factor from TA = 25OC
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (IF)
Recurrent Peak Forward Current
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
-65 to +200
-65 to +200
500
3.33
350
200
200
500
600
1.0
4.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Units
OC
OC
mW
mW/OC
OC/W
V
mA
mA
mA
Amp
Amp
Electrical Characteristics TA = 25OC unless otherwise noted
SYM
BV
IR
CHARACTERISTICS
Breakdown Voltage
Reverse Leakage
VF Forward Voltage
CT Capacitance
TRR Reverse Recovery Time
© 1997 Fairchild Semiconductor Corporation
MIN MAX UNITS
TEST CONDITIONS
250
100
100
1.00
1.25
5.0
50
V
IR = 100 uA
nA VR = 200 V
uA VR = 200 V TA = 150OC
V
IF = 100 mA
V
IF = 200 mA
pF VR = 0.0 V, f = 1.0 MHz
ns
IF= IR 30 mA IRR= 1.0 mA
RL = 100 Ohms
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