KSD794AYS 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSD794AYS

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

2.0

IB = 20mA

1.6

I = 18mA

B

I = 16mA

B

IB = 14mA

1.2

IB = 12mA

I = 10mA

B

0.8

IB = 8mA

IB = 6mA

I = 4mA

B

0.4

IB = 2mA

0.0

0

10

20

30

40

50

V [V], COLLECTOR-EMITTER VOLTAGE

CE

Figure 1. Static Characteristic

10

1

VBE(sat)

I = 10 I

C

B

0.1

VCE(sat)

0.01

1E-3

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

100

V = 5V

CE

10

1

0.01

0.1

1

IC[A], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product

©2001 Fairchild Semiconductor Corporation

1000

100

V = 5V

CE

10

1E-3

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

1000

I =0

E

f=1MHz

100

10

1

10

100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 4. Collector Output Capacitance

10

IC(Pulse) MAX.

IC(DC) MAX.

1

Dissipation

10ms

LimitedDC

1ms

PW=100us

S/b Limited

0.1

0.01

1

10

100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 6. Safe Operating Area

Rev. A1, June 2001

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