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BSS110 데이터 시트보기 (PDF) - Siemens AG

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BSS110 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BSS 110
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
Values
Unit
-55 ... + 150 °C
-55 ... + 150
200
K/W
E
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
-50
-
-
Gate threshold voltage
VGS(th)
VGS=VDS, ID = -1 mA
-0.8
-1.5
-2
Zero gate voltage drain current
IDSS
µA
VDS = -50 V, VGS = 0 V, Tj = 25 °C
-
-0.1
-1
VDS = -50 V, VGS = 0 V, Tj = 125 °C
-
-2
-60
VDS = -25 V, VGS = 0 V, Tj = 25 °C
-
-
-0.1
Gate-source leakage current
IGSS
nA
VGS = -20 V, VDS = 0 V
-
-1
-10
Drain-Source on-state resistance
RDS(on)
VGS = -10 V, ID = -0.17 A
-
5.3
10
Semiconductor Group
2
12/05/1997

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