ISTS822SD 데이터 시트보기 (PDF) - Unspecified
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ISTS822SD Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS ( T = 25°C Unless otherwise noted )
A
PARAMETER
MIN TYP MAX UNITS
Input
Output
Forward Voltage (V )
F
Reverse Voltage (V )
3
R
Reverse Current (IR)
Collector-emitter Breakdown (BV ) 30
CEO
( Note 1 )
1.2 1.6 V
V
10 µA
V
Emitter-collector Breakdown (BV ) 5
V
ECO
Collector-emitter Dark Current (I )
CEO
100 nA
TEST CONDITION
I = 20mA
F
I
R
=
10µA
VR = 3V
I = 1mA
C
I
E
=
100µA
V = 10V
CE
Coupled On-State Collector Current I ( )
C ON
( Note 1 )
ISTS150, ISTS250
250
( no apertures )
ISTS822S, ISTS832S
250
(0.25mm apertures phototransistors only)
ISTS822SD, ISTS832SD
100
( 0.25mm apertures in front of both -
- emitters and phototransistors )
Collector-emitter Saturation VoltageV
CE(SAT)
ISTS150, ISTS250
ISTS822S, ISTS832S
ISTS822SD, ISTS832SD
µA
µA
µA
0.4 V
0.4 V
0.4 V
20mA I , 10V V
F
CE
20mA I , 10V V
F
CE
20mA I , 10V V
F
CE
20mA
I
F
,
125µA
I
C
20mA IF , 125µA IC
20mA
I
F
,
50µA
I
C
Rise Time tr
Fall Time tf
6
µs
6
µs
Note 1 Special Selections are available on request. Please consult the factory.
V = 5V,
CC
I
F
=
20mA,
R=
L
100Ω
24/9/97
DB92003-AAS/A1
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