BA782S 데이터 시트보기 (PDF) - General Semiconductor

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BA782S

Bandswitching Diodes

General Semiconductor 

BA782S, BA783S

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Forward Voltage at IF = 100 mA

VF

–

–

Leakage Current at VR = 20 V

IR

–

–

Dynamic Forward Resistance

at f = 50 to 1000 MHz, IF = 3 mA

at f = 50 to 1000 MHz, IF = 10 mA

BA782S rf

BA783S rf

BA782S rf

BA783S rf

–

–

–

–

–

–

–

–

Capacitance

at VR = 1 V, f = 1 MHz

at VR = 3 V, f = 1 MHz

Ctot

–

–

BA782S

Ctot

–

–

BA783S

Ctot

–

–

Series Inductance across Case

LS

–

2.5

Max.

Unit

1

V

50

nA

0.7

Ω

1.2

Ω

0.5

Ω

0.9

Ω

1.5

pF

1.25

pF

1.2

pF

–

nH

RATINGS AND CHARACTERISTIC CURVES BA782S, BA783S

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