2SA733_05 데이터 시트보기 (PDF) - Unisonic Technologies

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2SA733_05

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SA733

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

Collector Dissipation(Ta=25℃)

VEBO

-5

V

PC

250

mW

Collector Current

Junction Temperature

Storage Temperature

IC

-150

mA

TJ

125

℃

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain(note)

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

SYMBOL

TEST CONDITIONS

BVCBO IC=-100µA, IE=0

BVCEO IC=-10mA, IB=0

VCE(SAT) IC=-100mA, IB=-10mA

ICBO VCB=-40V, IE=0

IEBO VEB=-3V, IC=0

hFE VCE=-6V, IC=-1mA

fT

VCE=-10V, IC=-50mA

Cob VCB=-10V, IE=0, f=1MHz

NF

IC=-0.1mA, VCE=-6V

RG=10kΩ, f=100Hz

CLASSIFICATION OF hFE

RANK

RANGE

R

90-180

Q

135-270

P

200-400

MIN TYP MAX UNIT

-60

V

-50

V

-0.1 -0.3 V

-100 nA

-100 nA

90

600

100 190

MHz

2.0 3.0 pF

4.0 6.0 dB

K

300-600

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R206-068,B

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