NE32500M 데이터 시트보기 (PDF) - California Eastern Laboratories.
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NE32500M
California Eastern Laboratories.
NE32500M Datasheet PDF : 3 Pages
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NE32500
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage V
4.0
VGS
Gate to Source Voltage V
-3.0
IDS
Drain Current
mA
IDSS
PT
Total Power Dissipation2 mW
200
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C -65 to +175
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Chip mounted on Alumina heatsink (size: 3 x 3 x 0.6t)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
0
0
50
100
150
200
250
Ambient Temperature, TA (°C)
NOISE FIGURE AND ASSOCIATED GAIN
vs. FREQUENCY
24
VDS = 2 V
ID = 10 mA
20
GA
16
1.0
12
0.5
0
1
8
NF
4
2
4 6 8 10 14 20 30
Frequency, f (GHz)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
60
40
20
0
-2.0
-1.0
0
Gate to Source Voltage, VGS (V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
VGS = 0 V
60
-0.2 V
40
-0.4 V
20
-0.6 V
-0.8 V
0
1.5
3.0
Drain to Source Voltage, VDS (V)
NOISE FIGURE AND ASSOCIATED GAIN
vs. DRAIN CURRENT
VDS = 2 V
f = 12 GHz
14
GA
13
12
2.0
11
1.5
10
1.0
0.5
NF
0
10
20
30
Drain Current, ID (mA)
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