BC847BPDXV6 데이터 시트보기 (PDF) - ON Semiconductor
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BC847BPDXV6 Datasheet PDF : 6 Pages
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BC847BPDXV6, SBC847BPDXV6
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
V
45
−
−
Collector −Emitter Breakdown Voltage
(IC = 10 μA, VEB = 0)
V(BR)CES
V
50
−
−
Collector −Base Breakdown Voltage
(IC = 10 mA)
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
V(BR)CBO
V
50
−
−
V(BR)EBO
V
6.0
−
−
ICBO
−
−
15
nA
−
−
5.0
μA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 μA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
−
−
150
−
200
290
475
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
0.25
V
−
0.6
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
0.7
−
V
−
0.9
−
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
mV
−
−
770
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
−
−
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Cobo
−
−
4.5
pF
NF
dB
−
−
10
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