NTE891 데이터 시트보기 (PDF) - NTE Electronics
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NTE891 Datasheet PDF : 3 Pages
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DC Electrical Characteristics: (TA = +25°C, VS = ±15V, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Offset Voltage
VOS RS = 10Ω
– 0.3 5
mV
Input Offset Current
IOS
– 10 200 nA
Input Bias Current
IB
– 500 1000 nA
Voltage Gain
Output Voltage Swing
AV
VOM
RL = 2kΩ, VO = ±10V
RL = 10kΩ
90 110 –
dB
±12 ±13.5 –
V
RL = 2kΩ
±10 ±13.4 –
Input Common–Mode Range
VCM
Common–Mode Rejection Ratio CMRR VIN = ±12V
±12 ±14.0 –
V
80 100 –
dB
Power Supply Rejection Ratio PSRR VS = 15V to 5V, –15V to –5V 80 100 –
dB
Supply Current
IQ VO = 0V, Both Amps
–
5
8
mA
AC Electrical Characteristics: (TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Slew Rate
SR RL = 2kΩ
5
7
– V/µs
Gain Bandwidth Product
GBW f = 100kHz
10 15 – MHz
Average Temperature
Coefficient of Input Offset
Voltage
∆VOS/∆T
–
2
– µV/°C
Distortion
Input Referred Noise Voltage
Input Referred Noise Current
THD
en
in
RL = 2kΩ, f = 20 ∼ 20kHz,
VOUT = 3Vrms, AV = 1
RS = 100Ω, f = 1kHz
f = 1kHz
– 0.002 –
%
– 4.5 – nV/√Hz
– 0.7 – pA/√Hz
Power Bandwidth
PBW VO = 27Vpp, RL = 2kΩ,
THD ≤ 1%
– 120 – kHz
Unity Gain Frequency
fU Open Loop
–
9
– MHz
Phase Margin
Input Referred Cross Talk
φM Open Loop
f = 20 ∼ 20kHz
– 60 –
deg
– –120 –
dB
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