IRL3803S 데이터 시트보기 (PDF) - International Rectifier

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IRL3803S

HEXFET Power MOSFET

International Rectifier 

IRL3803S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

VGS(th)

gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

30 ––– ––– V VGS = 0V, ID = 250µA

––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA…

––– ––– 0.006

VGS = 10V, ID = 71A „

––– ––– 0.009 Ω VGS = 4.5V, ID = 59A „

1.0 –––

V VDS = VGS, ID = 250µA

55 ––– –––

––– ––– 25

––– ––– 250

S VDS = 25V, ID = 71A…

µA VDS = 30V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 150°C

–––

–––

––– 100

––– -100

nA

VGS = 16V

VGS = -16V

––– ––– 140

ID = 71A

––– ––– 41 nC VDS = 24V

––– ––– 78

VGS = 4.5V, See Fig. 6 and 13 „…

––– 14 –––

VDD = 15V

––– 230 –––

ID = 71A

––– 29 –––

RG = 1.3Ω

––– 35 –––

RD = 0.20Ω, See Fig. 10 „…

––– 7.5 ––– nH Between lead,

and center of die contact

––– 5000 –––

VGS = 0V

––– 1800 ––– pF VDS = 25V

––– 880 –––

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

(Body Diode)

I SM

Pulsed Source Current

(Body Diode) 

MOSFET symbol

D

––– ––– 140†

A

showing the

integral reverse

G

––– ––– 470

p-n junction diode.

S

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

––– ––– 1.3

––– 120 180

V TJ = 25°C, IS = 71A, VGS = 0V „

ns TJ = 25°C, IF = 71A

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

––– 450 680 nC di/dt = 100A/µs „…

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

‚ VDD = 15V, starting TJ = 25°C, L = 180µH

RG = 25Ω, IAS = 71A. (See Figure 12)

… Uses IRL3803 data and test conditions.

† Calculated continuous current based on maximum allowable

ƒ ISD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

junction temperature;for recommended current-handling of the

package refer to Design Tip # 93-4

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

2

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