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JANTXV2N6796

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)

International Rectifier 

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET® TRANSISTORS

THRU-HOLE TO-205AF (TO-39)

Product Summary

Part Number

BVDSS

IRFF130

100V

RDS(on) ID

0.18 8.0A

PD-90430D

IRFF130

JANTX2N6796

JANTXV2N6796

100V, N-CHANNEL

REF: MIL-PRF-19500/557

Description

The HEXFET® technology is the key to International

Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on state

resistance combined with high trans conductance.

TO-39

Features

 Repetitive Avalanche Ratings

 Dynamic dv/dt Rating

 Hermetically Sealed

 Simple Drive Requirements

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching and temperature stability of the

electrical parameters.

They are well suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high energy pulse circuits.

Absolute Maximum Ratings

Symbol

Parameter

Value

ID1 @ VGS = 10V, TC = 25°C

ID2 @ VGS = 10V, TC = 100°C

IDM @ TC = 25°C

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TJ

TSTG

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

8.0

5.0

32

25

0.20

± 20

75

8.0

2.5

5.5

-55 to + 150

300 (0.063 in. /1.6 mm from case for 10s)

Weight

0.98 (Typical)

Units

A

W

W/°C

V

mJ

A

mJ

V/ns

°C

g

For Footnotes, refer to the page 2.

1

International Rectifier HiRel Products, Inc.

2018-11-20

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