NXP Semiconductors
MMIC wideband amplifier
Product specification
BGA2712
0
handbook, halfpage
s12 2
(dB)
−10
MLD906
−20
−30
−40
−50
0
1000
2000
3000
4000
f (MHz)
IS = 12.3 mA; VS = 5 V; PD = 30 dBm; ZO = 50
Fig.9 Isolation (s122) as a function of frequency;
typical values.
25
handbook, halfpage
s21 2
(dB)
20
15
MLD907
(1)
(2)
(3)
10
0
1000
2000
3000
4000
f (MHz)
PD = 30 dBm; ZO = 50
(1) IS = 15.1 mA; VS = 5.5 V.
(2) IS = 12.3 mA; VS = 5 V.
(3) IS = 10.1 mA; VS = 4.5 V.
Fig.10 Insertion gain (s212) as a function of
frequency; typical values.
10
handbook, halfpage
PL
(dBm)
5
0
−5
MLD908
(1)
(2)
(3)
10
handbook, halfpage
PL
(dBm)
5
0
−5
MLD909
(1)
(2)
(3)
−10
−30
−20
−10
0
PD (dBm)
f = 1 GHz; ZO = 50
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
−10
−30
−20
−10
0
PD (dBm)
f = 2.2 GHz; ZO = 50
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
2002 Sep 10
6