FDMS3610S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDMS3610S Datasheet PDF : 13 Pages
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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 17.5 A
VGS = 0 V, IS = 30 A
(Note 2) Q1
(Note 2) Q2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Q1
Q1
IF = 17.5 A, di/dt = 100 A/μs
Q2
Q2
Q1
IF = 30 A, di/dt = 300 A/μs
Q2
0.8 1.2
0.8 1.2
V
23
28
ns
9
28
nC
Notes:
1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 57 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 29 mJ is based on starting TJ = 25 oC; N-ch: L = 1.2 mH, IAS = 7 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 16 A.
Q2: EAS of 86 mJ is based on starting TJ = 25 oC; N-ch: L = 0.6 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 31 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
3
FDMS3610S Rev.C1
www.fairchildsemi.com
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