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IXKR47N60C5

CoolMOS™ 1) Power MOSFET

IXYS CORPORATION 

Advanced Technical Information

IXKR 47N60C5

CoolMOS™ 1) Power MOSFET

Electrically isolated back surface

2500 V electrical isolation

N-Channel Enhancement Mode

Low RDSon, high VDSS MOSFET

Ultra low gate charge

D

G

S

VDSS

= 600 V

ID25

= 47 A

R = DS(on) max 45 mΩ

ISOPLUS247TM

G

D

S

E72873

q

isolated back

surface

MOSFET

Symbol

VDSS

VGS

ID25

ID90

EAS

EAR

dV/dt

Conditions

TVJ = 25°C

TC = 25°C

TC = 90°C

single pulse

repetitive

ID = 11 A; TC = 25°C

MOSFET dV/dt ruggedness VDS = 0...480 V

Maximum Ratings

600 V

± 20

V

47 A

32 A

1950

3

50

mJ

mJ

V/ns

Symbol

RDSon

VGS(th)

IDSS

IGSS

Ciss

Coss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

RthJC

RthCH

wiConditions

Characteristic Values

(TVJ = 25°C, unless otherwise specified)

min. typ. max.

VGS = 10 V; ID = 44 A

VDS = VGS; ID = 3 mA

VDS = VDSS; VGS = 0 V

VGS = ± 20 V; VDS = 0 V

VGS = 0 V; VDS = 100 V

f = 1 MHz

TVJ = 25°C

TVJ = 150°C

VGS = 0 to 10 V; VDS = 400 V; ID = 44 A

VGS = 10 V; VDS = 400 V

ID = 44 A; RG = 3.3 Ω

with heatsink compound

40

2.5

3

50

6800

320

150

35

50

30

20

100

10

0.25

45 mΩ

3.5

V

10 µA

µA

100 nA

pF

pF

190 nC

nC

nC

ns

ns

ns

ns

0.45 K/W

K/W

Features

• Silicon chip on Direct-Copper-Bond

substrate

- high power dissipation

- isolated mounting surface

- 2500 V electrical isolation

- low drain to tab capacitance (< 30 pF)

• Fast CoolMOS™ 1) power MOSFET 4th

generation

- high blocking capability

- lowest resistance

- avalanche rated for unclamped

inductive switching (UIS)

- low thermal resistance

due to reduced chip thickness

• Enhanced total power density

Applications

• Switched mode power supplies

(SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

• Inductive heating

• PDP and LCD adapter

Advantages

• Easy assembly:

no screws or isolation foils required

• Space savings

• High power density

• High reliability

1) CoolMOS™ is a trademark of

Infineon Technologies AG.

IXYS reserves the right to change limits, test conditions and dimensions.

© 2008 IXYS All rights reserved

20080523b

1-4

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