MPF4393RLRPG(2012) 데이터 시트보기 (PDF) - ON Semiconductor

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MPF4393RLRPG
(Rev.:2012)

JFET Switching Transistors

ON Semiconductor 

MPF4392, MPF4393

100

10

Tchannel = 25°C

90

9.0

80

8.0

70

rDS(on) @ VGS = 0

60

50

7.0

6.0

VGS(off)

5.0

40

4.0

30

3.0

20

2.0

10

1.0

0

0

10 20 30 40 50 60 70 80 90 100 110 120 130 140 150

IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)

Figure 10. Effect of IDSS On Drain−Source

Resistance and Gate−Source Voltage

NOTE 2

The Zero−Gate−Voltage Drain Current (IDSS), is the

principle determinant of other J−FET characteristics.

Figure 10 shows the relationship of Gate−Source Off

Voltage (VGS(off)) and Drain−Source On Resistance

(rds(on)) to IDSS. Most of the devices will be within ±10%

of the values shown in Figure 10. This data will be useful

in predicting the characteristic variations for a given part

number.

For example:

Unknown

rds(on) and VGS range for an MPF4392

The electrical characteristics table indicates that an

MPF4392 has an IDSS range of 25 to 75 mA. Figure 10

shows rds(on) = 52 W for IDSS = 25 mA and 30 W for IDSS

75 mA. The corresponding VGS values are 2.2 V and

4.8 V.

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