IS61WV102416BLL-10MI 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS61WV102416BLL-10MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Silicon Solution 

IS61WV102416ALL

IS61WV102416BLL

IS64WV102416BLL

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

-8

Symbol Parameter Min. Max.

-10

Min. Max. Unit

trc

Read Cycle Time

8—

10 —

ns

taa

Address Access Time

—8

— 10

ns

toha

Output Hold Time

2.5 —

2.5 —

ns

tace

CE Access Time

—8

— 10

ns

tdoe

OE Access Time

— 5.5

— 6.5

ns

thzoe(2) OE to High-Z Output

—3

—4

ns

tlzoe(2)

OE to Low-Z Output

0—

0—

ns

thzce(2

CE to High-Z Output

03

04

ns

tlzce(2)

CE to Low-Z Output

3—

3—

ns

tba

LB, UB Access Time

— 5.5

— 6.5

ns

thzb(2)

tlzb(2)

LB, UB to High-Z Output

LB, UB to Low-Z Output

03

0—

03

ns

0—

ns

tpu

Power Up Time

0—

0—

ns

tpd

Power Down Time

—8

— 10

ns

Notes:

1.  Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V

and output loading specified in Figure 1.

2.  Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

9

Rev. G

06/02/2014

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