STGWA25H120DF2 데이터 시트보기 (PDF) - STMicroelectronics

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STGWA25H120DF2

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STGW25H120DF2, STGWA25H120DF2

TJ = 25 °C unless otherwise specified.

Symbol

Table 4. Static characteristics

Parameter

Test conditions

Collector-emitter

V(BR)CES breakdown voltage

(VGE = 0)

IC = 2 mA

VGE = 15 V, IC = 25 A

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 25 A

TJ = 125 °C

VGE = 15 V, IC = 25 A

TJ = 175 °C

IF = 25 A

VF Forward on-voltage

IF = 25 A, TJ = 125 °C

IF = 25 A, TJ = 175 °C

VGE(th) Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

(VGE = 0)

VCE = 1200 V

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

Min. Typ. Max. Unit

1200

V

2.1 2.6

2.4

V

2.5

3.8 4.9

3.05

V

2.8

5

6

7

V

25 µA

250 nA

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

- 2010 - pF

- 146 - pF

-

49 - pF

Qg Total gate charge

Qge Gate-emitter charge

Qgc Gate-collector charge

VCC = 960 V, IC = 25 A,

VGE = 15 V, see Figure 29

- 100 - nC

-

11 - nC

-

52 - nC

4/17

DocID023752 Rev 4

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