BUK9K18-40E115 데이터 시트보기 (PDF) - NXP Semiconductors.
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BUK9K18-40E115 Datasheet PDF : 13 Pages
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NXP Semiconductors
40
ID
(A)
10
4.5
30
003aaj629
3.5
BUK9K18-40E
Dual N-channel TrenchMOS logic level FET
80
ID
(A)
60
003aaj632
20
40
3
10
2.8
2.6
VGS(V) = 2.4
0
0
1
2
VDS(V) 3
Tj = 25 °C; tp = 300 μs
Fig. 9.
Fig. 8. Output characteristics; drain current as a
function of drain-source voltage; typical values
Tj = 175 °C
20
Tj = 25 °C
0
0
2
4
6 VGS(V) 8
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
3
VGS(th)
(V)
2.5
2
1.5
1
0.5
max
typ
min
003aah025
10-1
ID
(A)
10-2
10-3
10-4
10-5
003aah026
min
typ max
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
VGS (V)
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
BUK9K18-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 April 2013
© NXP B.V. 2013. All rights reserved
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