PHD98N03LT,118 데이터 시트보기 (PDF) - NXP Semiconductors.

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PHD98N03LT,118

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

PHD98N03LT

N-channel TrenchMOS logic level FET

Rev. 05 — 1 December 2006

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology.

1.2 Features

I Low on-state resistance

I Fast switching

1.3 Applications

I Computer motherboard high-frequency DC-to-DC converters

1.4 Quick reference data

I VDS ≤ 25 V

I RDSon ≤ 5.9 mΩ

I ID ≤ 75 A

I QGD = 15 nC (typ)

2. Pinning information

Table 1. Pinning

Pin

Description

1

gate (G)

2

drain (D)

3

source (S)

mb

mounting base; connected to drain (D)

Simplified outline

[1]

mb

[1] It is not possible to make a connection to pin 2.

2

1

3

SOT428 (DPAK)

Symbol

D

G

mbb076 S

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