PHD98N03LT,118 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHD98N03LT,118 Datasheet PDF : 12 Pages
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NXP Semiconductors
PHD98N03LT
N-channel TrenchMOS logic level FET
80
ID Tj = 25 °C 10 V 5 V 3.5 V
(A)
60
003aab659
3V
15
RDSon Tj = 25 °C
(mΩ)
10
003aab661
VGS = 3 V
40
3.5 V
2.5 V
5
5V
10 V
20
VGS = 2 V
0
0
0.2
0.4
0.6
0.8
1
VDS (V)
0
0
20
40
60
80
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
80
ID
(A)
60
003aab660
2
a
1.5
03af18
40
1
20
0.5
175 °C
Tj = 25 °C
0
0
1
2
3
4
VGS (V)
Tj = 25 °C and 175 °C; VDS > ID × RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
Tj (°C)
a = --------R----D----S--o---n--------
R D S o n ( 25 ° C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PHD98N03LT_5
Product data sheet
Rev. 05 — 1 December 2006
© NXP B.V. 2006. All rights reserved.
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