340N08NS 데이터 시트보기 (PDF) - Infineon Technologies
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340N08NS Datasheet PDF : 9 Pages
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OptiMOS™3 Power-Transistor
Features
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC340N08NS3 G
BSC340N08NS3 G
Product Summary
V DS
R DS(on),max
ID
80 V
34 mΩ
23 A
Package
Marking
PG-TDSON-8
340N08NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value
Unit
23
A
15
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
7
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=12 A, R GS=25 Ω
92
20
mJ
±20
V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.6
page 1
2009-11-04
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