340N08NS 데이터 시트보기 (PDF) - Infineon Technologies
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340N08NS Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=12 A; V GS=10 V
BSC340N08NS3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
60
4
55
50
45
40
max
35
3
120 µA
12 µA
2
30
typ
25
1
20
15
10
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
103
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
100
150°C,max
Ciss
25 °C
150 °C
25°C,max
102
Coss
10
101
Crss
100
0
Rev. 2.6
20
40
60
V DS [V]
1
80
0.0
page 6
0.5
1.0
1.5
V SD [V]
2.0
2009-11-04
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