MSC2712GT1G(2015) 데이터 시트보기 (PDF) - ON Semiconductor
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MSC2712GT1G Datasheet PDF : 5 Pages
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MSC2712GT1G, MSC2712YT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
V(BR)EBO
7.0
ICBO
−
−
Vdc
0.1
mAdc
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
ICEO
−
−
−
0.1
mAdc
2.0
mAdc
1.0
mAdc
hFE
−
MSC2712GT1G
MSC2712YT1G
200
400
120
240
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
−
0.5
Vdc
Current −Gain − Bandwidth Product
(IC = 1 mA, VCE = 10.0 V, f = 10 MHz)
fT
MHz
50
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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